february 2010 fdp2710_f085 n-channel powertrench ? mosfet ? 2010 fairchild semiconductor corporation fdp2710_f085 rev. a www.fairchildsemi.com 1 fdp2710_f085 n-channel powertrench ? mosfet 250v, 50a, 47 m ? features ? typ r ds(on) = 38m ? at v gs = 10v, i d = 50a ? typ q g(tot) = 78nc at v gs = 10v ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low rds(on) ? high power and current handling capability ? qualified to aec q101 ? rohs compliant general description this n-channel mosfet is produced using fairchil semi - conductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. applications ? pdp application ? hybrid electric vehicle dc/dc converters
fdp2710_f085 n-channel powertrench ? mosfet fdp2710_f085 rev. a www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 250 v v gs gate to source voltage 30 v i d drain current continuous (t c < 50 o c, v gs = 10v) 50 a continuous (t amb = 25 o c, v gs = 10v, with r ja = 62 o c/w) 4 pulsed see figure 4 e as single pulse avalanche energy (note 1) 483 mj p d power dissipation 403 w derate above 25 o c3.2w/ o c t j , t stg operating and storage temperature -55 to +150 o c r jc maximum thermal resistance junction to case 0.31 o c/w r ja maximum thermal resistance junction to ambient (note 2) 62 o c/w package marking and ordering information device marking device package reel size tape width quantity fdp2710 fdp2710_f085 to220 tube na 50 units electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 250 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c - 0.25 - v / c i dss zero gate voltage drain current v ds = 250v, - - 1 a v gs = 0v t c = 125 o c - - 500 i gss gate to source leakage current v gs = 30v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a33.95v r ds(on) drain to source on resistance i d = 50a, v gs = 10v, - 38 47 m ? i d = 50a, v gs = 10v, t j = 150 o c -104129 g fs forward transconductance i d = 25a, v ds = 10v - 63 - s c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 5690 - pf c oss output capacitance - 425 - pf c rss reverse transfer capacitance - 115 - pf q g(tot) total gate charge at 20v v gs = 0 to 10v v dd = 125v i d = 50a - 78 101 nc q gs gate to source gate charge -31-nc q gd gate to drain ?miller? charge - 20 - nc
fdp2710_f085 n-channel powertrench ? mosfet fdp2710_f085 rev. a www.fairchildsemi.com 3 electrical characteristics t c = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 1.68mh, i as = 24a. 2: pulse width 100s symbol parameter test conditions min typ max units t d(on) turn-on delay time v dd = 125v, i d = 50a v gs = 10v, r gen = 25 ? -85- ns t r rise time - 183 - ns t d(off) turn-off delay time - 140 - ns t f fall time - 121 - ns i s maximum continuous drain-source diode forward current - - 50 a i sm maximum pulsed drain-source diode forward current - - 150 a v sd source to drain diode voltage i sd = 50a - 0.9 1.2 v t rr reverse recovery time i sd = 50a, di sd /dt = 100a/ s - 166 216 ns q rr reverse recovery charge - 1 1.3 uc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
fdp2710_f085 n-channel powertrench ? mosfet fdp2710_f085 rev. a www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 0 10 20 30 40 50 60 v gs = 10v t c , case temperature ( o c ) i d , drain current (a) current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 3000 t c = 25 o c i = i 2 150 - t c 125 for temperatures above 25 o c derate peak current as follows:
fdp2710_f085 n-channel powertrench ? mosfet fdp2710_f085 rev. a www.fairchildsemi.com 5 figure 5. 1 10 100 0.01 0.1 1 10 100 1000 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 500 forward bias safe operating area 0.01 0.1 1 10 100 1 10 100 starting t j = 125 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2345678910 0 20 40 60 80 100 120 140 t j = -55 o c t j = 25 o c t j = 150 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 20v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 03691215 0 20 40 60 80 100 120 140 v gs = 5.5v v gs = 6v v gs = 6.5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 9. 678910 0 50 100 150 200 t j = 25 o c t j = 150 o c r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) i d = 50a pulse duration = 80 p s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 0.6 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5% max i d = 50a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
fdp2710_f085 n-channel powertrench ? mosfet fdp2710_f085 rev. a www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 0.90 0.95 1.00 1.05 1.10 1.15 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 10 100 1000 10000 20000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 14. 020406080 0 2 4 6 8 10 v dd = 130v i d = 50a v dd = 125v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 120v gate charge vs gate to source voltage typical characteristics
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